Перегляд за автором "Galiy, P.V."

Результати 1-6 з 6

Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy

Galiy, P.V.; Nenchuk, T.M.; Ciszewski, A.; Mazur, P.; Zuber, S.; Buzhuk, Ya.M. (Functional Materials, 2013)

Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different ...
Investigation of (100) In₄Se₃ crystal surface nanorelief

Galiy, P.V.; Ciszewski, A.; Dveriy, O.R.; Losovyj, Ya.B.; Mazur, P.; Nenchuk, T.M.; Zuber, S.; Fiyala, Ya.M. (Functional Materials, 2009)

The crystallography and topography of the (100) cleavage surfaces of layered semiconductor In₄Se₃ crystal have been studied by low energy electron diffraction (LEED), scanning tunnelling and atomic-force microscopy (STM, ...
Structural and energy changes at the cleavage surfaces of In₄Se₃ layered crystals under interface formation

Galiy, P.V.; Nenchuk, T.M.; Losovyj, Ya.B.; Fiyala, Ya.M. (Functional Materials, 2008)

Structural and energy changes at the cleavage surfaces of In₄Se₃ layered crystals during interface formation have been studied by means of the ultraviolet photo-electron spectroscopy (UPS) and low-energy electron diffraction. ...
Structural Aspect of Formation of a Nanosystem of In/In₄Se₃ (100)

Galiy, P.V.; Mazur, P.; Ciszewski, A.; Nenchuk, T.M.; Yarovets’, I.R.; Dveriy, O.R. (Металлофизика и новейшие технологии, 2018)

Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In₄Se₃ layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to ...
X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals

Galiy, P.V.; Musyanovych, A.V. (Functional Materials, 2005)

The results of X-ray photoelectron spectroscopy of the phase interface formation on the cleavage surfaces of layered semiconductor In₄Se₃, In₄Se₃(Cu) crystals are presented. The peculiarities of the process in the high-vacuum ...
Исследование гетеронаносистем металл–полупроводник NixInSe (0001)

Galiy, P.V.; Nenchuk, T.M.; Ciszewski, A.; Mazur, P.; Yarovets’, I.R.; Dveriy, O.R. (Металлофизика и новейшие технологии, 2017)

Scanning tunnelling microscopy/spectroscopy (STM/STS) data show that InSe layered crystal intercalated with nickel is a heteronanosystem—InSe layer-packet that alternates with nickel at fine dispersed phase in the interlayer ...

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Перегляд за автором "Galiy, P.V."

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